S.Thanikaikarasan_LAMM 2023

Biography
Dr. S. Thanikaikarasan Saveetha School of Engineering Saveetha Univerity, India
Title: COPPER CHALCONDIES: ELECTRODEPOSITION, PROPERTIES AND PEC CELLS
Abstract: Metal chlcogenides attracted substantial interest in numerous fields due to its combination of physical, chemical, optical, electrical and electronic properties. Copper sulfide, Copper selenide, Copper telluride have considerable interest because of its well defined structure, composition and electronic properties. The technique of electrodeposition have been employed to prepare Cu₂S, Cu₂Se, Cu₂Te thin film phtoelectrodes, since it is simple, low cost, low temperature, as well as the composition of deposited thin films controlled by the concentration of electrolytic bath and solution pH values. Also, the deposited films have well defined crystallinity without the process of annealing thereafter the crystallinity improvement depends upon the annealing temperature. The objective of the research work is the growth of Cu₂S, Cu₂Se, Cu₂Te phtoelectrodes Tin Oxide substrate by the technique of potentiostatic electrodeposition. XRD pattern reported that the deposited films found to polycrystalline nature with cubic and hexagonal structure at low temperature in between 50 and 80°C. Film composition with surface morphology represented that the deposited films have smooth surface with well defined stoichiometry. Optical properties reported that the deposited films found to be exhibit indirect transition with band gap value in between 2.3 and 2.8 eV. Also the determination of parameters band gap, refractive index, extinction coefficient, real, imaginary dielectric constant, electrical and optical conductivity to correlate the optical, electrical and electronic properties. Photoelectrochemical cells constructed using the fabricated Cu₂S, Cu₂Se, Cu₂Te photoelectrodes and the cell parameters open circuit voltage, short circuit constant, fill factor and efficiency cell were determined. Acknowledgement Principal Investigator (Dr.S.Thanikaikarasan) thanks to the Board of Research in Nuclear Sciences, Department of Atomic Energy ((BRNS-DAE), BARC, Mumbai, India for providing opportunity the for the project “Development of Photoelectrochemical Solar Cells by Electrochemical Synthesize and characterization of CuX (X=Se,Te) thin films References 1. B.Bharathi, S.Thanikaikarasan, Pratap Kollu, P.V. Chandrasekar, K. Sankaranarayanan , X. Sahaya Shajan,Effect of substrate on electroplated copper sulphide thin films, Journal of Mater Science Materials in Electronics 25 (2014)5338–5344 2. P.Jeyakumar, S. Thanikaikarasan, B. Natarajan,Role of substrate in electrodeposited copper telluride thin films, Journal of Mater Science Materials in Electronics 28 (2017)2538–2544 3. Electrochemical, structural, compositional and optical properties of Copper Selenide thin films Chinese Journal of Physics 63 (2020) 138 -148

Biography

Dr. S. Thanikaikarasan
Saveetha School of Engineering Saveetha Univerity, India

Title: COPPER CHALCONDIES: ELECTRODEPOSITION, PROPERTIES AND PEC CELLS

Abstract:

Metal chlcogenides attracted substantial interest in numerous fields due to its combination of physical, chemical, optical, electrical and electronic properties. Copper sulfide, Copper selenide, Copper telluride have considerable interest because of its well defined structure, composition and electronic properties. The technique of electrodeposition have been employed to prepare Cu₂S, Cu₂Se, Cu₂Te thin film phtoelectrodes, since it is simple, low cost, low temperature, as well as the composition of deposited thin films controlled by the concentration of electrolytic bath and solution pH values. Also, the deposited films have well defined crystallinity without the process of annealing thereafter the crystallinity improvement depends upon the annealing temperature. The objective of the research work is the growth of Cu₂S, Cu₂Se, Cu₂Te phtoelectrodes Tin Oxide substrate by the technique of potentiostatic electrodeposition. XRD pattern reported that the deposited films found to polycrystalline nature with cubic and hexagonal structure at low temperature in between 50 and 80°C. Film composition with surface morphology represented that the deposited films have smooth surface with well defined stoichiometry. Optical properties reported that the deposited films found to be exhibit indirect transition with band gap value in between 2.3 and 2.8 eV. Also the determination of parameters band gap, refractive index, extinction coefficient, real, imaginary dielectric constant, electrical and optical conductivity to correlate the optical, electrical and electronic properties. Photoelectrochemical cells constructed using the fabricated Cu₂S, Cu₂Se, Cu₂Te photoelectrodes and the cell parameters open circuit voltage, short circuit constant, fill factor and efficiency cell were determined.

Acknowledgement

Principal Investigator (Dr.S.Thanikaikarasan) thanks to the Board of Research in Nuclear Sciences, Department of Atomic Energy ((BRNS-DAE), BARC, Mumbai, India for providing opportunity the for the project “Development of Photoelectrochemical Solar Cells by Electrochemical Synthesize and characterization of CuX (X=Se,Te) thin films

References

1. B.Bharathi, S.Thanikaikarasan, Pratap Kollu, P.V. Chandrasekar, K. Sankaranarayanan , X. Sahaya Shajan,Effect of substrate on electroplated copper sulphide thin films, Journal of Mater Science Materials in Electronics 25 (2014)5338–5344

2. P.Jeyakumar, S. Thanikaikarasan, B. Natarajan,Role of substrate in electrodeposited copper telluride thin films, Journal of Mater Science Materials in Electronics 28 (2017)2538–2544

3. Electrochemical, structural, compositional and optical properties of Copper Selenide thin films

Chinese Journal of Physics 63 (2020) 138 -148